Stochastic behavior of an interface-based memristive device

نویسندگان

چکیده

A large number of simulation models have been proposed over the years to mimic electrical behavior memristive devices. The are based either on sophisticated mathematical formulations that do not account for physical and chemical processes responsible actual switching dynamics or multi-physical spatially resolved approaches include inherent stochastic real-world devices but computationally very expensive. In contrast available models, we present a inexpensive robust 1D model simulating interface-type efficiently incorporates observed in experiments can be easily transferred circuit frameworks. ion transport, resistive behavior, is modeled using kinetic cloud-in-a-cell scheme. calculated current–voltage characteristics obtained show excellent agreement with experimental findings.

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ژورنال

عنوان ژورنال: Journal of Applied Physics

سال: 2022

ISSN: ['1089-7550', '0021-8979', '1520-8850']

DOI: https://doi.org/10.1063/5.0084085